CM1500HC-66R_12 Datasheet, PDF (4/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< HVIGBT MODULES >
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
3000
Tj = 150°C
2500
V_GE = 19V
2000
1500
V_GE = 15V
V_GE = 13V
VGE = 11V
1000
500
V_GE = 9V
0
0
1
2
3
4
5
6
Collector - Emitter Voltage [V]
TRANSFER CHARACTERISTICS
(TYPICAL)
3000
2500
VCE = VGE
2000
1500
1000
500
Tj = 150°C
Tj = 25°C
0
0
2
4
6
8 10 12
Gate - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
3000
2500
VGE = 15V
2000
1500
Tj = 25°C
Tj = 125°C
Tj = 150°C
1000
500
0
0
1
2
3
4
5
Collector-Emitter Saturation Voltage [V]
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
3000
2500
2000
Tj = 125°C
Tj = 25°C
Tj = 150°C
1500
1000
500
0
0
1
2
3
4
5
Emitter-Collector Voltage [V]
December 2012 _(HVM-1054-D)
4