CM1200HC-66H_09 Datasheet, PDF (5/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7 ^{VGE = 0V, Tj = 25°C}
5 ^{f = 100kHz}
3
2
Cies
10²
7
5
3
2
Coes
10¹
7
5
Cres
3
2
101⁰_{0-1 2 3 5 7100 2 3 5 7101 2 3 5 7102}
COLLECTOR-EMITTER VOLTAGE (V)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3
VCC = 1650V, VGE = ±15V
RG(on) = RG(off) = 1.6Ω
2.5 ^{Tj = 125°C, Inductive load}
Eon
Eoff
2
1.5
1
Erec
0.5
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 1650V, IC = 1200A
Tj = 25°C
16
12
8
4
0
0
3
6
9
12
GATE CHARGE (µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
6
VCC = 1650V, IC = 1200A
VGE = ±15V
5 ^{Tj = 125°C, Inductive load}
Eon
4
3
Eoff
2
1
Erec
0
0
5
10
15
20
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005