CM1200HC-66H_09 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Item
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K
Limits
Unit
Min
Typ
Max
—
—
8.5 K/kW
—
—
17.0 K/kW
—
6.0
— K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Conditions
M
—
CTI
da
ds
LC-E(int)
RC-E(int)
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
TC = 25°C
Limits
Unit
Min
Typ
Max
7.0
—
13.0
3.0
—
6.0 N·m
1.0
—
2.0
—
1.5
—
kg
600
—
—
—
19.5
—
—
mm
32.0
—
—
mm
—
10
—
nH
—
0.16
—
mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005