CM1200HC-34H Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7 ^{VGE = 0V, Tj = 25°C}
5 ^{f = 100kHz}
3
2
Cies
10²
7
5
3
2
10¹
Coes
7
5
Cres
3
2
101⁰_{0-1 2 3 5 7100 2 3 5 7101 2 3 5 7102}
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 850V, IC = 1200A
Tj = 25°C
16
12
8
4
0
0
4
8
12
16
GATE CHARGE (µC)
1400
1200
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, VGE = ±15V
Eon
RG(on) = RG(off) = 2Ω
Tj = 125°C, Inductive load
1000
800
Eoff
600
400
Erec
200
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT (A)
2400
2000
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, IC = 1200A
Eon
VGE = ±15V
Tj = 125°C, Inductive load
1600
1200
Eoff
800
400
0
0
Erec
4
8
12
16
20
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005