CM1200HC-34H Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
2400
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 25°C
VGE = 15V
2000
VGE = 20V
VGE = 12V
1600
VGE = 10V
2400
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 10V
2000
1600
1200
1200
800
VGE = 8V
400
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE (V)
800
400
0
0
Tj = 25°C
Tj = 125°C
2
4
6
8
10 12
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005