CM1200E4C-34N Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200E4C-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
Cies
10²
7
5
3
2
10¹
7
Coes
5
3
2 _{VGE = 0V, Tj = 25°C}
f = 100kHz
101⁰_{0-1 2 3 5 7100 2 3}
5 710¹
Cres
2 3 5 710²
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 850V, IC = 1200A
Tj = 25°C
16
12
8
4
0
0
2
4
6
8
10
GATE CHARGE (µC)
1200
1000
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, VGE = ±15V
RG(on) = 0.6Ω, RG(off) = 3.3Ω
Eon
Tj = 125°C, Inductive load
800
Eoff
600
400
Erec
200
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT (A)
2000
1600
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
VCC = 850V, IC = 1200A
VGE = ±15V
Eon
Tj = 125°C, Inductive load
1200
800
400
0
0
Eoff
Erec
2
4
6
8
10 12
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005