CM1200E4C-34N Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM1200E4C-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200E4C-34N
q IC ................................................................ 1200A
q VCES ....................................................... 1700V
q Insulated Type
q 1-element in a Pack (for brake)
q AISiC Baseplate
q Trench Gate IGBT : CSTBT™
q Soft Reverse Recovery Diode
APPLICATION
Traction drives, DC choppers, Dynamic braking choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
57±0.25
130±0.5
57±0.25
4 - M8 NUTS
Dimensions in mm
4
2
3
1
C
E
G
4(C)
2(A)
C
G
E
3(E)
1(K)
CIRCUIT DIAGRAM
3 - M4 NUTS
screwing depth
min. 7.7
10.65±0.2
48.8±0.2
10.35±0.2
61.5±0.3
18±0.2
6 - φ 7 MOUNTING HOLES
screwing depth
min. 16.5
5.2±0.2
40±0.2
15±0.2
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005