CM100TX-24S1 Datasheet, PDF (5/10 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
16~18 30~32
16~18 30~32
16~18 30~32
VGE=15V ₁
VGE=15V ₅
VGE=15V ₉
IC
IC
IC
2
V
27~29
6
V
24~26
10
V
21~23
Short-
circuited 3
Short-
circuited 7
Short-
circuited 11
4
13~15
33~35
8
13~15
33~35
12
13~15
33~35
16~18
Short-
circuited 1
30~32
2
V
27~29
VGE=15V ₃
IC
4
13~15 33~35
Gate-emitter GVP-EVP GVN-EVN,
short-circuited GWP-EWP, GWN-EWN
UP / UN IGBT
16~18
Short-
circuited 5
30~32
16~18
Short-
circuited 9
30~32
6
V
24~26
10
V
21~23
VGE=15V ₇
8
VGE=15V ₁₁
IC
IC
12
13~15 33~35
13~15 33~35
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GWP-EWP, GWN-EWN
VP / VN IGBT
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GVP-EVP, GVN-EVN
WP / WN IGBT
VCEsat characteristics test circuit
16~18 30~32
16~18 30~32
16~18 30~32
Short-
Short-
Short-
circuited 1
IE
circuited 5
IE
circuited 9
IE
2
V
Short-
circuited 3
27~29
6
V
Short-
circuited 7
24~25
10
V
Short-
circuited 11
21~23
4
13~15
33~35
8
13~15
33~35
12
13~15
33~35
16~18
Short-
circuited 1
30~32
2
V
27~29
Short-
circuited 3
IE
4
13~15 33~35
Gate-emitter GVP-EVP GVN-EVN,
short-circuited GWP-EWP, GWN-EWN
UP / UN DIODE
16~18
Short-
circuited 5
30~32
16~18
Short-
circuited 9
30~32
6
10
V
V
24~26
21~23
Short-
circuited 7
Short-
IE
circuited 11
IE
8
12
13~15 33~35
13~15 33~35
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GWP-EWP, GWN-EWN
VP / VN DIODE
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GVP-EVP, GVN-EVN
WP / WN DIODE
VEC characteristics test circuit
Publication Date : December 2013
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