CM100TX-24S1 Datasheet, PDF (4/10 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM100TX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
V_CC
(DC) Supply voltage
V_GEon
Gate (-emitter drive) voltage
R_G
External gate resistance
CHIP LOCATION (Top view)
Conditions
Applied across P-N/P1-N1 terminals
Applied across
G*P-E*P/G*N-E*N(*=U, V, W) terminals
Per switch
Limits
Unit
Min.
Typ.
Max.
-
600
850
V
13.5
15.0
16.5
V
6.2
-
62
Ω
Dimension in mm, tolerance: ±1 mm
Tr*P/Tr*N: IGBT, Di*P/Di*N: DIODE (*=U/V/W), Th: NTC thermistor
TEST CIRCUIT AND WAVEFORMS
*: U, V, W
P1
i_E
P
v_GE
90 %
G*P
-V_GE
E*P
+V_GE
0
-V_GE
R_G
G*N
vGE
E*N
N1
Load
*
0V
+ V_CC
i_C
vCE
i_C
N
0A
t_d(on)
0
t
90 %
t_r
t_d(off)
10%
t_f
t
i_E
I_E
0A
I_rr
Q _{r r} =0.5×I _{r r} ×t _{r r}
t_rr
t
0.5×I _{r r}
Switching characteristics test circuit and waveforms
trr, Qrr characteristics test waveform
I_CM
v_CE
i_C
V_CC
i_C
V_CC
I_CM
v_CE
I_EM
i_E
0A
v_EC
V_CC
t
0.1×I_CM
0
0.1×V_CC
t
0.1×V_CC
0
0.02×I_CM
t
0V
t
t_i
IGBT Turn-on switching energy
t_i
IGBT Turn-off switching energy
t_i
DIODE Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : December 2013
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