BCR8UM Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
I QUADRANT
III QUADRANT
100
80
#2
#1
60
40
20
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V
A
V
RG
TEST PROCEDURE 3
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10³
TYPICAL EXAMPLE
7
5
IFGT I
4
IRGT I
3
IRGT III
2
10²
7
5
4
3
2
10¹
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
GATE CURRENT PULSE WIDTH (µs)
Feb.1999