BCR8UM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

BCR8UM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
10.2
4.5
1.27
TYPE
NAME
VOLTAGE
CLASS
V
φ3.8 ± 0.2
1.4
0.8
2.54
2.54 _0.6
2.6 ± 0.4
¡IT (RMS) ........................................................................ 8A
¡VDRM ..............................................................400V/600V
¡IFGT !, IRGT !, IRGT # ........................................... 15mA
¡Viso........................................................................ 1500V
APPLICATION
Light dimmer
Œ  Ž V Measurement point of
case temperature

ΠT1 TERMINAL
 T2 TERMINAL
Ž Ž GATE TERMINAL
Œ
TO-220
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VDRM
Repetitive peak off-state voltage ^V1
400
600
V
VDSM
Non-repetitive peak off-state voltage ^V1
500
720
V
Symbol
IT (RMS)
ITSM
I^2t
Parameter
RMS on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
Viso
Isolation voltage
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=94°C ^V3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Ratings
Unit
8
A
80
A
26
A²s
5
W
0.5
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
2.3
g
1500
V
Feb.1999