BCR20A Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20C)
160 _{ALL FINS ARE BLACK PAINTED}
ALUMINUM AND GREASED
140 _{CURVES APPLY REGARDLESS}
OF CONDUCTION ANGLE
120
160 160 t4.0
100
120 120 t3.0
80
80 80 t2.0
60
NATURAL
40
CONVECTION
: MOUNTING ON FIN
20
WITHOUT GREASE
: MICA PLATE
WITH GREASE
0
0 4 8 12 16 20 24 28 32
RMS ON-STATE CURRENT (A)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20E)
160 _{ALL FINS ARE BLACK PAINTED}
ALUMINUM AND GREASED
140 _{RESISTIVE, INDUCTIVE LOADS}
NATURAL CONVECTION
120
160 160 t4.0
100
120 120 t3.0
80
80 80 t2.0
60
CURVES APPLY
REGARDLESS
40
OF CONDUCTION
ANGLE
20
0
0 4 8 12 16 20 24 28 32
RMS ON-STATE CURRENT (A)
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V
A
V
RG
TEST PROCEDURE 3
Feb.1999