BCR20A Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR20A, BCR20B, BCR20C, BCR20E
OUTLINE DRAWING
Dimensions
in mm
1
φ2.0 MIN
3
1
3
2
φ8.7 MAX
• IT (RMS) ...................................................................... 20A
• VDRM ..............................................................400V/500V
• IFGT !, IRGT !, IRGT # ........................................... 30mA
φ11 MAX
2
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
BCR20A
APPLICATION
Contactless AC switches, light dimmer,
on/off control of traffic signals, on/off control of copier lamps, microwave ovens,
solid state relay
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VDRM
Repetitive peak off-state voltage ^V1
400
500
V
VDSM
Non-repetitive peak off-state voltage ^V1
600
700
V
Symbol
Parameter
IT (RMS)
RMS on-state current
ITSM
I^2t
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
V1. Gate open.
Conditions
Commercial frequency, sine full
wave, 360° conduction
BCR20A, B, C
BCR20E
Tc=98°C
Tb=64°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
Unit
20
A
220
A
203
A²s
5.0
W
0.5
W
10
V
2.0
A
–20 ~ +125
°C
–20 ~ +125
°C
Feb.1999