SA01 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER

MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY〉
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3 _{SA01,07 AUX THYRISTOR}
2
10²
7
5 ^{SA02,04 AUX THYRISTOR}
4
3
2
10¹
–20 –10 0 10 20 30 40 50 60 70 80
JUNCTION TEMPERATURE (°C)
COMMUTATING CHARACTERISTICS
(SA01,SA02)
1000
800
600
400
200
VCM = 350V Ta = 25°C
L = 25µH SEE FIG.1
0
120 140 160 180 200 220
PEAK ON-STATE CURRENT (A)
COMMUTATING CHARACTERISTICS
(SA07)
1000
800
600
400
200
0
120 140 160 180 200 220
PEAK ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
GATE TRIGGER PULSE WIDTH
10⁴
7
TYPICAL EXAMPLE
5
3
SA01,07 AUX THYRISTOR
2
10³
7 MAIN
5 _THYRISTOR
3
2
10²
7
5
3 ^{SA02,04 AUX THYRISTOR}
2
10¹
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³
GATE TRIGGER PULSE WIDTH (µs)
COMMUTATING CHARACTERISTICS
(SA04)
1400
VCM = 350V
L = 25µH
1200
Ta = 25°C
SEE FIG.1
1000
800
600
400
160 180 200 220 240 260
PEAK ON-STATE CURRENT (A)
COMMUTATING CAPACITOR VS.
AMBIENT TEMPERATURE
1.8
TYPICAL EXAMPLE
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0 10 20 30 40 50 60 70 80 90 100
AMBIENT TEMPERATURE (°C)
Feb.1999