SA01 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER

MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR ARRAY〉
SA01, SA02, SA04, SA07
THYRISTOR ARRAY
SA SERIES FOR STROBE FLASHER
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
Symbol
IDRM
Parameter
Repetitive peak off-state current ^V1
SA01
SA02
SA04
SA07
Unit
Main
Aux
Main
Aux
Main
Aux
Main
Aux
100
20
100
100
100
100
100
20
µA
IRRM
Repetitive peak reverse current
100
20
100
100
100
100
100
20
µA
IGT
Gate trigger current
30
0.25
30
30
50
30
80
0.25
mA
VGT
Gate trigger voltage
IH
Holding current ^V2
1.5
1.0
1.5
1.5
2.0
1.5
1.5
1.0
V
—
1.0
—
25
—
25
—
1.0
mA
V1. Connect 1kΩ resistor between gate to cathode.
V2. Minimum value
SR1FM
L
22k
υ trg
CC 47n
VCM _CM
+
−
10
10k
i1
1
i5
5
1k
2
SAOX
4
47n
3
iG
10n
470 470
Fig. 1 Test circuit
SA120
12345
1
MAIN THYRISTOR
5
AUX THYRISTOR
2
4
3
Fig. 3 Pin position and Equivalent circuit
υ trg
0
t
iG
iG
0
t
i1
IP
0
t
tw
i5
0
t
Fig. 2 The voltage and current waveforms
Feb.1999