PS21997-4_11 Datasheet, PDF (4/11 Pages) Mitsubishi Electric Semiconductor – Dual-In-Line Package Intelligent Power Module

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21997-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 6 EXTERNAL PART OF THE DIPIPM PROTECTION CIRCUIT
DIPIPM
P
Drive circuit
External protection circuit
P-side IGBTS
N-side IGBTS
Short Circuit Protective Function (SC) :
SC protection is achieved by sensing the N-side DC-Bus current (through the external
shunt resistor) after allowing a suitable filtering time (defined by the RC circuit).
When the sensed shunt voltage exceeds the SC trip-level, all the N-side IGBTs are turned
OFF and a fault signal (Fo) is output. Since the SC fault may be repetitive, it is
recommended to stop the system when the Fo signal is received and check the fault.
IC (A)
SC Protection
U
Trip Level
V
W
N1
Shunt Resistor
AN
(Note 1)
CR
VNC
Drive circuit
CIN
B
Protection circuit
C
(Note 2)
0
Note1: In the recommended external protection circuit, please select the RC time constant in the range 1.5~2.0µs.
2: To prevent erroneous protection operation, the wiring of A, B, C should be as short as possible.
Collector current
waveform
2
tw (µs)
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Ratings
Unit
VCC
Supply voltage
Applied between P-N
450
V
VCC(surge) Supply voltage (surge)
Applied between P-N
500
V
VCES
Collector-emitter voltage
600
V
±IC
Each IGBT collector current
TC = 25°C
30
A
±ICP
Each IGBT collector current (peak)
TC = 25°C, less than 1ms
60
A
PC
Collector dissipation
Tj
Junction temperature
TC = 25°C, per 1 chip
47.6
W
(Note 1)
–20~+125
°C
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIPIPM is 150°C (@ TC ≤ 100°C). However, to
ensure safe operation of the DIPIPM, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ TC ≤ 100°C).
CONTROL (PROTECTION) PART
Symbol
VD
VDB
Parameter
Control supply voltage
Control supply voltage
VIN
Input voltage
VFO
Fault output supply voltage
IFO
Fault output current
VSC
Current sensing input voltage
Condition
Ratings
Unit
Applied between VP1-VNC, VN1-VNC
20
V
Applied between VUFB-U, VVFB-V, VWFB-W
20
V
Applied between UP, VP, WP, UN, VN,
WN-VNC
–0.5~VD+0.5
V
Applied between FO-VNC
–0.5~VD+0.5
V
Sink current at FO terminal
Applied between CIN-VNC
1
mA
–0.5~VD+0.5
V
Sep. 2008
4