PS12018-A Datasheet, PDF (4/6 Pages) Powerex Power Semiconductors – FLAT-BASE TYPE INSULATED TYPE

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MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS12018-A
FLAT-BASE TYPE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj = 25°C, VDH = 15V, VDB = 15V, VDL = 5V unless otherwise noted)
Symbol
Item
Condition
Ratings
Min.
Typ.
Max. ^Unit
fPWM
PWM input frequency
TC ≤ 100°C, Tj ≤ 125°C
—
—
15
kHz
txx
Allowable input on-pulse width VDH = 15V, VDL = 5V, TC = –20°C ~ +100°C Note 3)
1
—
500
µs
tdead
Allowable input signal dead time Relates to corresponding inputs (Except brake part)
for blocking arm shoot-through TC = –20°C ~ +100°C
4.0
—
—
µs
tint
Input inter-lock sensing
Relates to corresponding inputs (Except brake part)
—
65
100
ns
VCO
VC+(200%)
VC–(200%)
Analogue signal linearity with
output current
Ic = 0A
Ic = IOP(200%)
Ic = –IOP(200%)
VDH = 15V
VDL = 5V
TC = –20 ~ 100°C
1.87 2.27
2.57
V
0.77 1.17
1.47
V
(Fig.4) 2.97 3.37
3.67
V
|∆VCO| Offset change area vs temperature VDH = 15V, VDL = 5V, TC = –20 ~ 100°C
—
15
—
mV
VC+
VC–
Analogue signal output voltage limit
Ic > IOP(200%), VDH = 15V,
VDL = 5V
—
—
(Fig. 4) _4.0
—
0.7
V
—
V
∆VC(200%)
Analogue
variation
signal
overall
linear
|VCO-VC±(200%)|
—
1.1
—
V
rCH
Analogue signal data hold
Correspond to max. 500µs data hold period only,
accuracy
Ic = IOP(200%)
(Fig. 5) ^–5
—
td(read)
Analogue signal reading time After input signal trigger point
(Fig. 8) —
3
ICL(H)
ICL(L)
Signal output cur-
rent of CL operation
Idle
Active
Open collector onput
—
—
—
1
5
%
—
µs
1
µA
—
mA
±IOL
CL warning operation level
VDL = 5V, VDH = 15V, TC = –20 ~ 100°C
(Note 4) ^26.0
32.5
39.0
A
SC
Short circuit current trip level Tj = 25°C
(Fig. 7), (Note 5) 43.0 55.0
—
A
OT
OTr
Over tenperature
protection
Trip level
Reset level
VDL = 5V, VDH = 15V
100
110
120
°C
—
90
—
°C
UVDB
Trip level
10.0 11.0
12.0
V
UVDBr
UVDH
UVDHr
OVDH
Supply circuit
under and
over voltage
protection
Reset level
Trip level
Reset level
Trip level
TC = –20°C ~ +100°C
Tj ≤ 125°C
10.5 11.5
12.5
V
11.05 12.00 12.75 _V
11.55 12.50 13.25 _V
18.00 19.20 20.15 _V
OVDHr
Reset level
16.50 17.50 18.65 _V
tdv
IFO(H)
IFO(L)
Filter time
Fault output current
Idle
Open collector output
Active
—
10
—
—
—
1
—
µs
1
µA
—
mA
(Note 3) : (a) Allowable minimum input on-pulse width : This item applies to P-side circuit only.
(b) Allowable maximum input on-pulse width : This item applies to both P-side and N-side circuits excluding the brake circuit.
(Note4) : CL output : The "current limit warning (CL) operation circuit outputs warning signal whenever the arm current exceeds this limit. The
circuit is reset automatically by the next input signal and thus, it operates on a pulse-by-pulse scheme.
(Note5) : The short circuit protection works instantaneously when a high short circuit current flows through an internal IGBT rising up momen-
tarily. The protection function is, thus meant primarily to protect the ASIPM against short circuit distraction. Therefore, this function is
not recommended to be used for any system load current regulation or any over load control as this might, cause a failure due to
excessive temperature rise. Instead, the analogue current output feature or the over load warning feature (CL) should be appropri-
ately used for such current regulation or over load control operation. In other words, the PWM signals to the ASIPM should be shut
down, in principle, and not to be restarted before the junction temperature would recover to normal, as soon as a fault is feed back
from its FO1 pin of the ASIPM indicating a short circuit situation.
RECOMMENDED CONDITIONS
Symbol
Item
Condition
VCC
Supply voltage
VDH, VDB Control supply voltage
VDL
Control supply voltage
∆VDH, ∆VDB,
∆VDL
Supply voltage ripple
VCIN(on) Input ON voltage
VCIN(off) Input OFF voltage
fPWM
PWM Input frequency
tdead
Arm shoot-through blocking time
Applied between P-N
Applied between VDH-GND, CBU+-CBU–, CBV+-CBV–,
CBW+-CBW–
Applied between VDL-GND
Using application circuit
Using application circuit
Ratings
Unit
Min.
Typ.
Max.
—
600
800
V
13.5 15.0 16.5
V
4.8
5.0
5.2
V
–1
—
+1
V/µs
—
—
0.3
V
4.8
—
—
V
2
10
15
kHz
4.0
—
—
µs
Jan. 2000