PS12018-A Datasheet, PDF (2/6 Pages) Powerex Power Semiconductors – FLAT-BASE TYPE INSULATED TYPE

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MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS12018-A
FLAT-BASE TYPE
INSULATED TYPE
INTERNAL FUNCTIONS BLOCK DIAGRAM
P
Brake resistor connection,
Inrush prevention circuit,
etc.
B
Application Specific Intelligent
Power Module
Protection
Circuit
Input Circuit
Drive Circuit
AC 400V line input
R
S
T
ZC
N
U
V
W
M
AC 400V
line output
T
S
Z : Surge absorber.
C : AC filter (Ceramic condenser 2.2~6.5nF)
[Note : Additionally an appropriate Line-to line
surge absorber circuit may become necessary
depending on the application environment].
Current sensing
circuit
Input signal conditioning
Drive Circuit
Fo Logic
Protection Control supply
circuit
fault sense
CU CV CW
UP VP WP UN VN WN Br CL,FO1,FO2,FO3
Analogue signal output corresponding to PWM input
Fault output
GND VDL VDH
each phase current (5V line) Note 1) (5V line) Note 2)
(5V line) Note 3)
Note 1) To prevent chances of signal oscillation, a series resistor (1kΩ) coupling at each output is recommended.
Note 2) By virtue of integrating a photo-coupler inside the module, direct coupling to CPU, without any extemal opto or transformer isolation is possible.
Note 3) All outputs are open collector type. Each signal line should be pulled up to plus side of the 5V power supply with approximately 5.1kΩ resistance.
Note 4) The wiring between power DC link capacitor and P/N terminals should be as short as possible to protect the ASIPM against catastrophic high surge voltage.
For extra precaution, a small film snubber capacitor (0.1~0.22µF, high voltage type) is recommended to be mounted close to these P and N DC power input pins.
(Fig. 2)
MAXIMUM RATINGS (Tj = 25°C)
INVERTER PART (Including Brake Part)
Symbol
Item
Condition
Ratings
Unit
VCC
Supply voltage
Applied between P-N
900
V
VCC(surge) Supply voltage (surge)
Applied between P-N, Surge-value
1000
V
VP or VN Each output IGBT collector-emitter static voltage Applied between P-U, V, W, Br or U, V, W, Br-N
1200
V
VP(S) or
VN(S)
Each output IGBT collector-emitter surge voltage Applied between P-U, V, W, Br or U, V, W, Br-N
1200
V
±Ic(±Icp)
Ic(Icp)
IF(IFP)
Each output IGBT collector current
Brake IGBT collector current
Brake diode anode current
TC = 25°C
Note : “( )” means IC peak value
±25 (±50)
A
10 (20)
A
10 (20)
A
CONTROL PART
Symbol
Item
VDH, VDB Supply voltage
VDL
VCIN
Supply voltage
Input signal voltage
VFO
Fault output supply voltage
IFO
Fault output current
VCL
Current-limit warning output voltage
ICL
CL output current
ICO
Analogue-current-signal output current
Condition
Applied between VDH-GND, CBU+-CBU–,
CBV+-CBV–, CBW+-CBW–
Applied between VDL-GND
Applied between UP · VP · WP · UN · VN ·
WN · Br-GND
Applied between FO1 · FO2 · FO3-GND
Sink current of FO1 · FO2 · FO3
Applied between CL-GND
Sink current of CL
Sink current of CU · CV · CW
Ratings
20
7
–0.5 ~ VDL+0.5
–0.5 ~ 7
15
–0.5 ~ 7
15
±1
Unit
V
V
V
V
mA
V
mA
mA
Jan. 2000