M5M54R08AJ-10 Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM

MITSUBISHI LSIs
M5M54R08AJ-10,-12,-15
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
(2)READ CYCLE
Symbol
Parameter
tCR
ta(A)
ta(S)
ta(OE)
tdis(S)
tdis(OE)
ten(S)
ten(OE)
tv(A)
tPU
tPD
Read cycle time
Address access time
Chip select access time
Output enable access time
Output disable time after S high
Output disable time after OE high
Output enable time after S low
Output enable time after OE low
Data valid time after address change
Power-up time after chip selection
Power-down time after chip selection
M5M54R08AJ-10
Min
Max
10
10
10
5
0
5
0
5
2
0
2
0
10
Limits
M5M54R08AJ-12
Min
Max
12
12
12
6
0
6
0
6
3
1
3
0
12
M5M54R08AJ-15 Unit
Min
Max
15
ns
15 _ns
15 ns
7 ns
0
7 ns
0
7 ns
3
ns
1
ns
3
ns
0
ns
15 ns
(3)WRITE CYCLE
Symbol
Parameter
t_CW
tw(W)
tw(W)
tsu(A)1
tsu(A)2
tsu(S)
tsu(D)
th(D)
trec(W)
tdis(W)
tdis(OE)
ten(W)
ten(OE)
tsu(A-WH)
Write cycle time
Write pulse width (OE low)
Write pulse width(OE high)
Address setup time(W)
Address setup time(S)
Chip select setup time
Data setup time
Data hold time
Write recovery time
Output disable time after W low
Output disable time after OE high
Output enable time after W high
Output enable time after OE low
Address to W High
M5M54R08AJ-10
Min
Max
10
10
8
0
0
8
5
0
1
0
5
0
5
0
0
8
Limits
M5M54R08AJ-12
Min
Max
12
12
10
0
0
10
6
0
1
0
6
0
6
0
0
10
M5M54R08AJ-15 _Unit
Min
Max
15
ns
15
ns
10
ns
0
ns
0
ns
10
ns
7
ns
0
ns
1
ns
0
7 _ns
0
7 _ns
0
ns
0
ns
10
ns
MITSUBISHI
ELECTRIC
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