FS50SMJ-06 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
10 _{Tch = 25°C}
ID = 50A
8
VDS = 10V
20V
6
40V
4
2
0
0
20 40 60 80 100
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS50SMJ-06
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
100
VGS = 0V
Pulse Test
80
TC = 125°C
60
75°C
25°C
40
20
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
7 ^{VGS = 10V}
5
4
ID = 1/2ID
Pulse Test
3
2
10⁰
7
5
4
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
VDS = 10V
ID = 1mA
3.2
2.4
1.6
0.8
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
107²
5
3
2
107¹
5
3
2
D = 1.0
107⁰
5
0.5
0.2
3
2
10^–₇¹
5
3
2
0.1
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D= ^tw
T
10^–2_{10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102}
PULSE WIDTH tw (s)
Feb.1999