FS50SMJ-06 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS50SMJ-06
MITSUBISHI Nch POWER MOSFET
FS50SMJ-06
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
15.9MAX.
r
f 3.2
Dimensions in mm
4.5
1.5
2
4.4
G
1.0
q we
5.45
5.45
0.6
2.8
¡4V DRIVE
¡VDSS ................................................................................. 60V
¡rDS (ON) (MAX) ............................................................. 20mΩ
¡ID ........................................................................................ 50A
¡Integrated Fast Recovery Diode (TYP.) ............ 70ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
4
wr
q GATE
q
w DRAIN
e SOURCE
r DRAIN
e
TO-3P
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 100µH
Typical value
Conditions
Ratings
60
±20
50
200
50
50
200
70
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999