FG3000DV-90DA Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
40
VD = 2250V
35 ^{VDM = 3375V}
diGQ/dt = –40A/µs
30
VRG = 17V
CS = 6.0µF
25
LS = 0.3µH
Tj = 125°C
20
tgq
15
ts
10
5
0
0
1000 2000 3000 4000
TURN OFF CURRENT (A)
800
700
600
500
400
300
200
100
0
0
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
1000
VD = 2250V
VDM = 3375V
diGQ/dt = –40A/µs
VRG = 17V
CS = 6.0µF
LS = 0.3µH
Tj = 125°C
2000 3000 4000
TURN OFF CURRENT (A)
TURN ON SWITCHING ENERGY
(MAXIMUM)
8
VD = 2250V
7 ^{IGM = 40A}
diG/dt = 10A/µs
6
CS = 6.0µF
RS = 5Ω
5 ^{Tj = 125°C}
diT/dt = 500A /µs
4
300A /µs
3
2
100A /µs
1
0
0 1000 2000 3000 4000 5000
TURN ON CURRENT (A)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG3000DV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
VD = 2250V
VDM = 3375V
40
IT = 3000A
VRG = 17V
CS = 6.0µF
LS = 0.3µH
30 Tj = 125°C
20
tgq
ts
10
0
20 30 40 50 60 70
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
1000
800
600
400
200
0
0
VD = 2250V
VDM = 3375V
IT = 3000A
VRG = 17V
CS = 6.0µF
LS = 0.3µH
Tj = 125°C
20 40 60 80 100
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
10
9
8
CS = 3.0µF _4.0µF
7
6.0µF
6
5
4
VD = 2250V
3
VDM = 3375V
2
diGQ/dt = –40A/µs
VRG = 17V
1
LS = 0.3µH
Tj = 125°C
0
0 1000 2000 3000 4000 5000
TURN OFF CURRENT (A)
Aug.1998