FG3000DV-90DA Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
5000
4500
4000
3500
3000
2500
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
60°
θ = 30°
180°
120°
90°
2000
1500
1000
500
0
0 200 400 600 800 1000
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
5000
4000
3000
DC
270°
180°
120°
90°
60°
θ = 30°
2000
θ
1000
0
0
360°
RESISTIVE,
INDUCTIVE
LOAD
500 1000 1500 2000
AVERAGE ON-STATE CURRENT (A)
8000
7000
6000
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
VD = 5 ~ 20V
IT = 25 ~ 200A
HALF SINE WAVE
5000
4000
3000
2000
1000
0
–60 –20 20
60 100 140
JUNCTION TEMPERATURE (°C)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG3000DV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
150
θ
140
360°
130
RESISTIVE,
120
INDUCTIVE
LOAD
110
100
90
80
70
θ = 30° 60° 90° 120° 180°
60
0 200 400 600 800 1000
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
130
120
θ
110
360°
RESISTIVE,
100
INDUCTIVE
LOAD
90
80
70
60
60° 120° 270°
θ = 30° 90° 180°
50
0
500 1000
DC
1500
2000
AVERAGE ON-STATE CURRENT (A)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
10.0
8.0
tgt
IT = 3000A
VD = 2250V
diT/dt = 500A /µs
diG/dt = 20A /µs
Tj = 125°C
6.0
4.0
2.0
td
0
0
20 40 60 80 100
TURN ON GATE CURRENT (A)
Aug.1998