CM600HB-90H Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Single IGBTMOD™ HVIGBT 600 Amperes/4500 Volts

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM600HB-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
5
3
2
VCC = 2250V, VGE = ±15V
RG = 15Ω, Tj = 125°C
Inductive load
10¹
7
5
3
td(off)
2
td(on)
10⁰
7
tr
5
3
tf
2
10^–1
7
5 _{5 7 102 2 3 5 7 103 2 3 5}
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
5.0
VCC = 2250V, VGE = ±15V,
RG = 15Ω, Tj = 125°C,
Eon
4.0 ^{Inductive load}
3.0
Eoff
2.0
1.0
0
0
Erec
200 400 600 800 1000 1200
CURRENT (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
VCC = 2250V, Tj = 25°C
3 Inductive load
3
2 ^{IGBT drive conditions}
2
VGE = ±15V, RG = 15Ω
10⁰
trr
10³
7
7
5
Irr
5
3
3
2
2
10^–1
7
5 _{5 7 102}
23
5 7 10³
23
10²
7
55
EMITTER CURRENT IE (A)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3.0
2.5
2.0
1.5
1.0
0.5
0
0 5 10 15 20 25 30
GATE RESISTANCE (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 2250V
IC = 600A
16
12
8
4
0
0 2000 4000 6000 8000 10000
GATE CHARGE QG (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10¹
7 Single Pulse
5 _{TC = 25°C}
3 Rth(j – c)Q = 0.0135K/ W
2 _{Rth(j – c)R = 0.027K/ W}
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–3 2 3 5 7 10^–2 2 3 5 7 10^–1 2 3 5 7 10⁰
TIME (s)
Mar. 2003