CM600HB-90H Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Single IGBTMOD™ HVIGBT 600 Amperes/4500 Volts

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM600HB-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
1200
1000
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 25°C
VGE=20V
VGE=12V
VGE=10V
800 ^VGE=15V
VGE=14V
600
400
VGE=8V
200
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
12000
VCE = 10V
10000
Tj = 25°C
Tj = 125°C
8000
6000
4000
2000
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
VGE = 15V
6
4
2
Tj = 25°C
Tj = 125°C
0
0 200 400 600 800 1000 1200
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
Ic=1200A
4
Ic=600A
2
Ic=240A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
8
6
4
2
Tj = 25°C
Tj = 125°C
0
0 200 400 600 800 1000 1200
EMITTER CURRENT IE (A)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7 VGE = 15V, Tj = 25°C
5 _{Cies, Coes : f = 100kHz}
3 Cres
: f = 1MHz
2
Cies
10²
7
5
3
2
10¹
7
5
Coes
3
2
Cres
10⁰
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003