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CM600DU-5F_09 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE | |||
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HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
td(off)
7
5
td(on)
tf
3
2
102
7
5
3
2
101
101
tr
2 3 5 7 102
Conditions:
VCC = 100V
VGE = ±10V
RG = 4.2â¦
Tj = 125°C
Inductive load
2 3 5 7 103
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10â3
101
2
3
5 710â22 3
5 710â12 3
5 7100
23
5 7 101
7
5
IGBT part:
Per unit base = Rth(jâc) = 0.11K/ W
3 FWDi part:
2 Per unit base = Rth(jâc) = 0.20K/ W
100
7
5
3
3
2
2
10â1
7
5
10â1
7
5
3
3
2
2
10â2
7
5
3
2
10â3
Single Pulse
TC = 25°C
10â2
7
5
3
2
10â3
10â52 3 5 710â42 3 5 710â3
TIME (s)
MITSUBISHI IGBT MODULES
CM600DU-5F
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
trr
2
Irr
102
7
5
3
2
101
101
23
5 7 102
Conditions:
VCC = 100V
VGE = ±10V
RG = 4.2â¦
Tj = 25°C
Inductive load
2 3 5 7 103
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 600A
16
VCC = 50V
12
VCC = 100V
8
4
0
0
1000 2000 3000 4000
500 1500 2500 3500 4500
GATE CHARGE QG (nC)
Feb. 2009
4
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