CM600DU-5F_09 Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM600DU-5F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
IC(rms)
Collector current
ICM
IE (Note 1)
IE(rms) (Note 1) Emitter current
IEM (Note 1)
PC (Note 3) Maximum collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
Viso
Isolation voltage
— Torque strength
—
Weight
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Conditions
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Ratings
250
±20
600
350
1200
600
350
1200
1100
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
580
Unit
V
V
A
A(rms)
A
A
A(rms)
A
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Limits
Min.
Typ.
—
—
VGE(th) Gate-emitter threshold voltage IC = 60mA, VCE = 10V
3.0
4.0
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
—
VCE(sat) Collector-emitter saturation voltage IC = 600A, VGE = 10V
Tj = 25°C
—
1.2
Tj = 125°C —
1.1
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
—
—
—
—
—
—
QG
Total gate charge
VCC = 100V, IC = 600A, VGE = 10V
—
2200
td(on)
Turn-on delay time
—
—
tr
Turn-on rise time
VCC = 100V, IC = 600A
—
—
td(off)
Turn-off delay time
VGE = ±10V
—
—
tf
Turn-off fall time
RG = 4.2Ω, Inductive load
—
—
trr (Note 1) Reverse recovery time
IE = 600A
—
—
Qrr (Note 1) Reverse recovery charge
—
20.0
VEC(Note 1) Emitter-collector voltage
IE = 600A, VGE = 0V
—
—
Rth(j-c)Q
Rth(j-c)R
Thermal resistance^*1
IGBT part (1/2 module)
FWDi part (1/2 module)
—
—
—
—
Rth(c-f)
Contact thermal resistance
Case to heat sink, Thermal compound applied^*2 (1/2 module)
—
Rth(j-c’)Q Thermal resistance^*3
Case temperature measured point is just under the chips ^—
0.02
—
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*^{1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.}
*^{2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].}
*^{3 : If you use this value, Rth(f-a) should be measured just under the chips.}
Max.
1
5.0
0.5
1.7
—
170
11
5.7
—
850
600
1100
500
300
—
2
0.11
0.20
—
0.05
Unit
mA
V
µA
V
nF
nC
ns
ns
µC
V
K/W
Feb. 2009
2