CM50TU-34KA_09 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10⁴
7
5
3
2
10³
tf
7
5
3
2
td(off)
10²
7
5
3 ^Conditions:
2 _{VCC = 1000V}
td(on)
tr
10¹
7
5
VGE = ±15V
RG = 6.3Ω
3 Tj = 125°C
2 _{Inductive load}
10⁰_{100 2 3 5 7 101}
23
5 7 10²
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10^–32 3 5 710^–22 3 5 710^–12 3 5 710⁰ 2 3 5 7 10¹
10¹
7
5
IGBT part:
Per unit base = Rth(j–c) = 0.21K/ W
3
2
FWDi part:
Per unit base = Rth(j–c) = 0.47K/ W
10⁰
7
5
3
3
2
2
10^–1
7
5
10^–1
7
5
3
3
2
2
10^–2
7
5
3
2
10^–3
Single Pulse
TC = 25°C
10^–2
7
5
3
2
10^–3
10^–52 3 5 710^–42 3 5 710^–3
TIME (s)
MITSUBISHI IGBT MODULES
CM50TU-34KA
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10³
7 ^Conditions:
5 ^{VCC = 1000V}
VGE = ±15V
3 RG = 6.3Ω
2 ^{Tj = 25°C}
Inductive load
10²
Irr
7
trr
5
3
2
10¹_{100 2 3 5 7 101 2 3 5 7 102}
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 50A
16
VCC = 800V
12
VCC = 1000V
8
4
0
0 50 100 150 200 250 300
GATE CHARGE QG (nC)
Feb. 2009
4