CM50TU-34KA_09 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
100
Tj = 25°C
12
11
VGE = 20V
80
15
14
10
60
40
9
20
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
6
VGE = 15V
5
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0
20 40 60 80 100
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7 ^{Tj = 25°C}
5
3
2
10²
7
5
3
2
10¹
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
3
MITSUBISHI IGBT MODULES
CM50TU-34KA
HIGH POWER SWITCHING USE
TRANSFER CHARACTERISTICS
(TYPICAL)
100
VCE = 10V
Tj = 25°C
80
Tj = 125°C
60
40
20
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
IC = 100A
4
IC = 50A
2
IC = 20A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10¹
7
Cies
5
3
2
10⁰
7
5
Coes
3
2
10^–1
7
5
3
2
VGE = 0V
Cres
10^–₁²_{0–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7102}
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2009