CM50AD00-12H Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE

THYRISTOR PART
Symbol
Parameter
Test conditions
IDRM
IRRM
ITM
IGT
VGT
dv/dt
IH
Rth(j-c)
Repetitive peak off-state current
Repetitive peak reverse current
On-state voltage
Gate trigger current
Gate trigger voltage
VD=800V
VR=800V
IT=50A, instantaneous means
VD=6V, IT=1A
VD=6V, IT=1A
Critical rate of rise of off-state
Voltage
Tj=125°C, VD=540V, exp. waveform
Holding current
Thermal resistance
MITSUBISHI IGBT MODULES
CM50AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
Limits
Min.
Typ.
Max. ^Unit
—
—
1
mA
—
—
1
mA
—
—
1.30
V
—
—
100 mA
—
—
3
V
500
—
—
V/µs
—
50
—
mA
—
—
1.3 °C/W
THERMISTOR PART
Symbol
Parameter
RTH
Resistance
B
B Constant
Test conditions
TC = 25°C
Resistance at 25°C, 50°C
Limits
Min.
Typ.
Max. ^Unit
—
100
—
kΩ
(Note.5) —
4000
—
K
RESISTOR PART
Symbol
Parameter
R
—
Resistance
Temperature coefficient
Test conditions
Measured between N-N1
Limits
Unit
Min. Typ. Max.
—
2.3
—
mΩ
—
0.060
— %/°C
COMMON RATING
Symbol
Parameter
Test conditions
Min.
Rth(c-f)
Contact thermal resistance
Case to fin, Thermal compound applied*¹ (1 module)
—
Note. 1 IE, VEC, trr, Qrr, diE/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2 Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3 Junction temperature (Tj) should not increase beyond 150°C.
4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
5 B = (InR1-InR2)/(1/T1-1/T2)
R1 : Resistance at T1(K)
R2 : Resistance at T2(K)
*^{1 : Typical value is measured by using Shin-etsu Silicone “G-746”.}
Limits
Typ.
0.035
Max.
—
Unit
°C/W
Sep. 2000