CM50AD00-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE

ELECTRICAL CHARACTERISTICS (Tj = 25°C)
INVERTER PART
Symbol
Parameter
Test conditions
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th) ^{Gate-emitter threshold voltage} IC = 5.0mA, VCE = 10V
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
VEC(Note.1)
trr (Note.1)
Qrr (Note.1)
Rth(j-c)Q
Rth(j-c)R
Gate-emitter cutoff current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 150°C
IC = 50A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 300V, IC = 50A, VGE = 15V
VCC = 300V, IC = 50A
VGE1 = VGE2 = 15V
RG = 13Ω
Resistive load
IE = 50A, VGE = 0V
IE = 50A, VGE = 0V
diE / dt = – 100A / µs
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
BRAKE PART
Symbol
Parameter
Test conditions
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
VFM
Rth(j-c)Q
Rth(j-c)R
Gate-emitter threshold voltage IC = 5.0mA, VCE = 10V
Gate-emitter cutoff current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Thermal resistance
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 150°C
IC = 50A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 300V, IC = 50A, VGE = 15V
IF = 50A, Clamp diode part
IGBT part
Clamp diode part
CONVERTER PART
Symbol
Parameter
IRRM
V FM
Rth(j-c)
Repetitive reverse current
Forward voltage drop
Thermal resistance
Test conditions
VR = VRRM, Tj = 150°C
IF = 50A
Per 1/6 module
MITSUBISHI IGBT MODULES
CM50AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
Min.
—
4.5
—
—
(Note.4)
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
6
—
2.2
—
—
—
—
150
—
—
—
—
—
—
0.14
—
—
Max.
1
7.5
0.5
2.8
—
5.0
3.8
1.0
—
120
300
200
300
2.8
110
—
1.2
2.2
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
°C/W
°C/W
Min.
—
4.5
—
—
(Note.4)
—
—
—
—
—
—
—
—
Limits
Typ.
—
6
—
2.2
—
—
—
—
150
—
—
—
Max.
1
7.5
0.5
2.8
—
5.0
3.8
1.0
—
2.8
1.5
2.4
Unit
mA
V
µA
V
nF
nF
nF
nC
V
°C/W
°C/W
Limits
Min.
Typ.
Max. ^Unit
—
—
8 mA
—
—
1.5
V
—
—
1.7 °C/W
Sep. 2000