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CM400HB-90H Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Single IGBTMOD™ HVIGBT 400 Amperes/4500 Volts
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2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400HB-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
5
3
2
VCC = 2250V, VGE = ±15V
RG = 22.5Ω, Tj = 125°C
Inductive load
101
7
5
3
td(off)
2
td(on)
100
7
tr
5
3
tf
2
10–1
7
5
5
7 102
23
5 7 103
23
5
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
5.0
VCC = 2250V, VGE = ±15V,
RG = 22.5Ω, Tj = 125°C,
4.0 Inductive load
3.0
Eon
2.0
1.0
0
0
Eoff
Erec
200
400
600
800
CURRENT (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
101
104
7
VCC = 2250V, Tj = 125°C 7
5
Inductive load
IGBT drive conditions
5
3
VGE = ±15V, RG = 22.5Ω 3
2
2
100
trr
103
7
7
5
5
Irr
3
3
2
2
10–1
5
7 102
23
5 7 103
23
EMITTER CURRENT IE (A)
102
5
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3.0
2.5
2.0
1.5
1.0
0.5
0
0 5 10 15 20 25 30
GATE RESISTANCE (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 2250V
IC = 400A
16
12
8
4
0
0
2000 4000 6000 8000
GATE CHARGE QG (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
101
7 Single Pulse
5 TC = 25°C
3 Rth(j – c)Q = 0.021K/ W
2 Rth(j – c)R = 0.042K/ W
100
7
5
3
2
10–1
7
5
3
2
10–2
10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100
TIME (s)
Mar. 2003