CM400HB-90H Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Single IGBTMOD™ HVIGBT 400 Amperes/4500 Volts

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400HB-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
800
Tj=25°C
VGE=12V
VGE=10V
600 ^VGE=20V
VGE=15V
VGE=14V
400
200
VGE=8V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
7000
6000
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE=10V
Tj = 25°C
Tj = 125°C
5000
4000
3000
2000
1000
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
VGE=15V
6
4
2
Tj = 25°C
Tj = 125°C
0
0
200
400
600
800
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
IC=800A
4
IC=400A
2
IC=200A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
8
6
4
2
Tj = 25°C
Tj = 125°C
0
0
200
400
600
800
EMITTER CURRENT IE (A)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7
5
VGE = 15V, Tj = 25°C
Cies, Coes : f = 100kHz
3
2
Cres
: f = 1MHz
10²
Cies
7
5
3
2
10¹
7
5
3
2
10⁰
10^–1 2 3
5 7 10⁰ 2 3
Coes
Cres
5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003