CM400DU-5F Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Trench Gate Design Dual IGBTMOD™ 400 Amperes/250 Volts

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
td(off)
7
td(on)
5
tf
3
tr
2
10²
7
5
3
2
10¹
10¹
23
5 7 10²
Conditions:
VCC = 100V
VGE = ±10V
RG = 6.3Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10^–32 3 5 710^–22 3 5 710^–12 3 5 710⁰ 2 3 5 7 10¹
10¹
7
5
IGBT part:
Per unit base = Rth(j–c) = 0.14°C/ W
3 _{FWDi part:}
2 _{Per unit base = Rth(j–c) = 0.24°C/ W}
10⁰
7
5
3
3
2
2
10^–1
7
5
10^–1
7
5
3
3
2
2
10^–2
7
5
3
2
10^–3
Single Pulse
TC = 25°C
10^–2
7
5
3
2
10^–3
10^–52 3 5 710^–42 3 5 710^–3
TMIE (s)
MITSUBISHI IGBT MODULES
CM400DU-5F
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10³
7
5
3
2
10²
7
5
3
2
10¹₁₀₁
23
5 7 10²
trr
Irr
Conditions:
VCC = 100V
VGE = ±10V
RG = 6.3Ω
Tj = 25°C
Inductive load
2 3 5 7 10³
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 400A
16
VCC = 50V
12
VCC = 100V
8
4
0
0 500 1000 1500 2000 2500 3000
GATE CHARGE QG (nC)
Mar. 2002