CM400DU-5F Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Trench Gate Design Dual IGBTMOD™ 400 Amperes/250 Volts

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
800
Tj = 25°C
10 ₈
6.25
VGE =
15V
6.5
600
6
400
5.75
5.5
200
5.25
5
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
2
VGE = 10V
Tj = 25°C
1.6
Tj = 125°C
1.2
0.8
0.4
0
0 100 200 300 400 500 600 700 800
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7 ^{Tj = 25°C}
5
3
2
10²
7
5
3
2
10¹
0.6 0.8 1 1.2 1.4 1.6 1.8
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM400DU-5F
HIGH POWER SWITCHING USE
TRANSFER CHARACTERISTICS
(TYPICAL)
800
VCE = 10V
700
Tj = 25°C
Tj = 125°C
600
500
400
300
200
100
0
0
2
4
6
8
10
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
4
2
IC = 400A _{IC = 800A}
IC = 160A
0
0 2 4 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10²
7
5
Cies
3
2
10¹
7
5
3
2
10⁰
7
5
3
2
VGE = 0V
10^–1
10^–1 2 3 5 7 10⁰ 2 3
Coes
Cres
5 7 10¹ 2 3 5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2002