CM300DY-34A Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. COLLECTOR CURRENT
10⁴
7
5
3
2
td(off)
10³
td(on)
7
5
tf
3
2
10²
7
5
3
2
101¹ ₀₁
tr
23
5 7 10²


Conditions:

VCC = 1000V
VGE = ±15V
RG = 1.6Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
10³
7 ^Conditions:
5 VCC = 1000V
3 VGE = ±15V
2 _{RG = 1.6Ω}
Eon
10^{2 Tj = 125°C}
7 Inductive load
Eoff
5
3
2
Err
10¹
7
5
3
2
101⁰ _{01 2 3 5 7 102 2 3 5 7 103}
COLLECTOR CURRENT IC (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
10³
7
5
3
trr
2
10²
7
5
3
2
10¹₁₀₁
23
5 7 10²
Irr
Conditions:
VCC = 1000V
VGE = ±15V
RG = 1.6Ω
Tj = 25°C
Inductive load
2 3 5 7 10³
EMITTER CURRENT IC (A)
4
MITSUBISHI IGBT MODULES
CM300DY-34A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. GATE RESISTANCE
10⁴
7
5
3
2
td(on)
td(off)
10³
7
tr
5
3
2
10²
7
5
3
2
101¹ ₀₀
23
5 7 10¹
tf
Conditions:
VCC = 1000V
VGE = ±15V
IC = 300A
Tj = 125°C
Inductive load
2 3 5 7 10²
GATE RESISTANCE RG (Ω)
SWITCHING LOSS vs.
GATE RESISTANCE
10³
7
5
3
Eon
2
10²
7
5
3 ^Conditions:
2
VCC = 1000V
VGE = ±15V
IC = 300A
101¹ _{00 2 3 5}
Eoff
Err
Tj = 125°C
Inductive load
7 10¹ 2 3 5
7 10²
GATE RESISTANCE RG (Ω)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10⁰
7
5
3
2
10^–1
7
5
3
2
Single Pulse
Tc= 25°C
Tc measured point is
just under the chips
10^–2
7
5 IGBT part:
3 ^{Per unit base = Rth(j–c) = 0.043°C/W}
2 ^{FWDi part:}
Per unit base = Rth(j–c) = 0.072°C/ W
10^–3
10^–52 3 5710^–42 3 5710^–32 3 5710^–22 3 5710^–12 3 5710⁰ 2 3 5710¹
TIME (s)
Jun. 2007