CM300DY-34A Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
600
Tj = 25°C
12
500
VGE =
20V
15
13
400
11
300
200
10
100
8
9
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
5
VGE = 15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0
200
400
600
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
10³
7
Tj = 25°C
5
Tj = 125°C
3
2
10²
7
5
3
2
10¹
0
1
2
3
4
EMITTER-COLLECTOR VOLTAGE VEC (V)
3
MITSUBISHI IGBT MODULES
CM300DY-34A
HIGH POWER SWITCHING USE
TRANSFER CHARACTERISTICS
600
VCE = 10V
500
400
300
200
100
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
10
Tj = 25°C
8
6
IC = 600A
IC = 300A
4
2
IC = 120A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
10²
7
Cies
5
3
2
10¹
7
5
3
2
Coes
10⁰
7
5
Cres
3
2
VGE = 0V
10^–₁¹_{0–1 2 3 5 7 100 2 3}
5 7 10¹ 2 3
5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Jun. 2007