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CM300DU-12F Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
2
102
7
5
3
2
101101
2 3 5 7 102
trr
Irr
Conditions:
VCC = 300V
VGE = ±15V
RG = 2.1Ω
Tj = 25°C
2 3 5 7 103
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
18 IC = 300A
16
VCC = 200V
14
12
VCC = 300V
10
8
6
4
2
0
0 500 1000 1500 2000 2500
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
101
7
5
IGBT part:
Per unit base = Rth(j–c) = 0.16°C/ W
3
2
FWDi part:
Per unit base = Rth(j–c) = 0.24°C/ W
100
7
5
3
3
2
2
10–1
7
5
10–1
7
5
3
3
2
2
10–2
7
5
3
2
10–3
Single Pulse
TC = 25°C
10–2
7
5
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TMIE (s)
Aug. 1999