 English |
|
|
|
|
|
|
|
| CM300DU-12F Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
| |||
| ◁ |
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
600
Tj=25°C
500
VGE=20V
1511
10
9.5
400
9
300
8.5
200
100
8
7.5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 600A
2
IC = 300A
1
IC = 120A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCEâVCE
CHARACTERISTICS
(TYPICAL)
102
7
Cies
5
3
2
101
7
5
3
2
Coes
100
7
5
3 VGE = 0V
2
Cres
10â1
10â1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
3
VGE = 15V
2.5
2
1.5
1
0.5
Tj = 25°C
Tj = 125°C
0
0
200
400
600
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
7 Tj = 25°C
5
3
2
102
7
5
3
2
101
0 0.5 1 1.5 2 2.5 3 3.5 4
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
td(off)
3
td(on)
2
tf
102
7
5
3
2
tr
101
Conditions:
7
VCC = 300V
5
VGE = ±15V
3
RG = 2.1â¦
2
Tj = 125°C
100
100 2 3 5 7101 2 3 5 7102 2 3 5 7103
COLLECTOR CURRENT IC (A)
Aug. 1999
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese