CM200TU-12F_09 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10²
7
trr
5
Irr
3
2
10¹
7
5
3
2
10⁰
10¹
23
5 7 10²
Conditions:
VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 25°C
2 3 5 7 10³
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
18 IC = 200A
16
VCC = 200V
14
VCC = 300V
12
10
8
6
4
2
0
0 200
600 1000 1400 1800
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM200TU-12F
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10^–3
10¹
2
3
5 710^–22 3
5 710^–12 3
5 710⁰
23
5 7 10¹
7
5
IGBT part:
Per unit base = Rth(j–c) = 0.21K/ W
3 _{FWDi part:}
2 _{Per unit base = Rth(j–c) = 0.35K/ W}
10⁰
7
5
3
3
2
2
10^–1
7
5
10^–1
7
5
3
3
2
2
10^–2
7
5
3
2
10^–3
Single Pulse
TC = 25°C
10^–2
7
5
3
2
10^–3
10^–52 3 5 710^–42 3 5 710^–3
TIME (s)
Feb. 2009
4