CM200TU-12F_09 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

CM200TU-12F
MITSUBISHI IGBT MODULES
CM200TU-12F
HIGH POWER SWITCHING USE
¡IC ................................................................... 200A
¡VCES ............................................................ 600V
¡Insulated Type
¡6-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
107
90 ±0.25
12 ²³ 12
4–φ5.5
MOUNTING HOLES
(4)
CM
N
P
GuP
EuP
GvP
EvP
GwP
EwP
11 21.7 11 21.7 11 14.4
GE
GE
GE
GE
GE
GE
GuN
EuN
GvN
EvN
GwN
EwN
U
V
W
5–M5NUTS
Tc measured point ^2.8
12 ₂₃ 12 ₂₃ 12
0.8
11 21.7 11 21.7 11
Tc measured point
4
P
GUP
LABEL
RTC
EUP _U
GUN
RTC
EUN
N
29
+1
–0.5
GVP
RTC
EVP _V
GVN
RTC
EVN
GWP
RTC
EWP _W
GWN
RTC
EWN
CIRCUIT DIAGRAM
Feb. 2009