English
Language : 

CM200E3U-12H_09 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
◁
MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
103
7
5
tf
3
td(off)
2
102
7
5
3
2
101101
2 3 5 7 102
td(on)
tr
VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
2 3 5 7 103
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
101
7
5
Single Pulse
3 TC = 25°C
2 Per unit base = Rth(j – c) = 0.19K/W
100
7
5
3
3
2
2
10–1
7
5
10–1
7
5
3
3
2
2
10–2
7
5
10–2
7
5
3
2
10–3
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
lrr
101
7
7
5
5
3
3
2
2
102
trr
100
7
7
5
5
3
2 –di/dt = 400A/µs
Tj = 25°C
101101 2 3 5 7 102
23
3
2
10–1
5 7 103
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
101
7
5
Single Pulse
3 TC = 25°C
2 Per unit base = Rth(j – c) = 0.35K/W
100
7
5
3
3
2
2
10–1
7
5
10–1
7
5
3
3
2
2
10–2
7
5
10–2
7
5
3
2
10–3
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
IC = 200A
15
VCC = 200V
VCC = 300V
10
5
0
0 100 200 300 400 500 600
GATE CHARGE QG (nC)
4
Feb. 2009