CM200E3U-12H_09 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
500
Tj=25°C
400
15 14
VGE=20
(V)
13
300
12
200
11
10
100
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0 100 200 300 400 500
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10²
7 ^{Tj = 25°C}
5
3
2
10¹
7
5
3
2
10⁰
0.6 1.0 1.4 1.8 2.2 2.6 3.0
EMITTER-COLLECTOR VOLTAGE VEC (V)
3
MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSFER CHARACTERISTICS
(TYPICAL)
400
VCE = 10V
300
200
100
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 400A
6
IC = 200A
4
2
IC = 80A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10²
7 VGE = 0V
5
3
2
10¹
Cies
7
5
3
2
Coes
10⁰
7
5
Cres
3
2
10^–₁¹ _{0–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102}
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2009