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CM200DU-34KA Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD KA-Series Module 200 Amperes/1700 Volts
◁
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
5
3
2 tf
td(off)
103
7 td(on)
5
3
2
102
7
5
tr
3
2
101
101 2 3
5 7 102
Conditions:
VCC = 1000V
VGE = ±15V
RG = 1.6Ω
Tj = 125°C
Inductive load
2 3 5 7 103
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
101
7
5
IGBT part:
Per unit base = Rth(j–c) = 0.11°C/ W
3 FWDi part:
2 Per unit base = Rth(j–c) = 0.18°C/ W
100
7
5
3
3
2
2
10–1
7
5
10–1
7
5
3
3
2
2
10–2
7
5
3
2
Single Pulse
TC = 25°C
10–2
7
5
3
2
10–3
10–3
10–52 3 5 710–42 3 5 710–3
TMIE (s)
MITSUBISHI IGBT MODULES
CM200DU-34KA
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
2
102
7
5
3
2
101101
23
5 7 102
trr
Irr
Conditions:
VCC = 1000V
VGE = ±15V
RG = 1.6Ω
Tj = 25°C
Inductive load
2 3 5 7 103
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 200A
16
VCC = 800V
12
VCC = 1000V
8
4
0
0 200 400 600 800 1000 1200
GATE CHARGE QG (nC)
Sep. 2001