CM200DU-34KA Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD KA-Series Module 200 Amperes/1700 Volts

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
400
Tj = 25°C
12
11
VGE = 20V
300
15
14
10
200
9
100
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
6
VGE = 15V
5
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0
100
200
300
400
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7 Tj = 25°C
5
3
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM200DU-34KA
HIGH POWER SWITCHING USE
TRANSFER CHARACTERISTICS
(TYPICAL)
400
VCE = 10V
Tj = 25°C
Tj = 125°C
300
200
100
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
IC = 400A
4
IC = 200A
2
IC = 80A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10²
7
5
3
2
Cies
10¹
7
5
3
2
Coes
10⁰
7
Cres
5
3
2
VGE = 0V
10^–₁¹_{0–1 2 3 5 7 100 2 3}
5 7 10¹ 2 3
5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Sep. 2001