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CM150TL-12NF_12 Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE
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REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
2
102
7 Irr
5
trr
3
2
101
101 2 3
5 7 102
Conditions:
VCC = 300V
VGE = ±15V
RG = 4.2Ω
Tj = 25°C
Inductive load
2 3 5 7 103
EMITTER CURRENT IE (A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
101
7
Esw(off)
5
3
2
Esw(on)
100
7
5
3
2
10–1
101
23
Conditions:
VCC = 300V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
Inductive load
C snubber at bus
5 7 102 2 3 5 7 103
COLLECTOR CURRENT IC (A)
101
7
5
3
2
100
7
5
3
2
10–1
101
RECOVERY LOSS vs. IE
(TYPICAL)
Err
23
Conditions:
VCC = 300V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
Inductive load
C snubber at bus
5 7 102 2 3 5 7 103
EMITTER CURRENT IE (A)
4
MITSUBISHI IGBT MODULES
CM150TL-12NF
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
100
7
Single Pulse,
5
TC = 25°C
3
Under the chip
2
10–1
7
5
3
2
IGBT part:
10–2 Per unit base =
7
5
Rth(j–c) = 0.17K/W
FWDi part:
3
2
Per unit base =
Rth(j–c) = 0.31K/W
10–3
10–1
7
5
3
2
10–2
7
5
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TIME (s)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
102
Conditions:
7 VCC = 300V
5 VGE = ±15V
3 IC = 150A
Tj = 125°C
2 Inductive load
C snubber at bus
101
7 Esw(off)
5
3
2 Esw(on)
1010 00 2 3 5 7 101 2 3 5 7 102
GATE RESISTANCE RG (Ω)
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
101
7
5
3
2
Err
100
7 Conditions:
VCC = 300V
5 VGE = ±15V
3 IE = 150A
Tj = 125°C
2 Inductive load
C snubber at bus
10–1
100 2 3 5 7 101
23
5 7 102
GATE RESISTANCE RG (Ω)
Feb. 2009
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