CM150TL-12NF_12 Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM150TL-12NF
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
—
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
DC, TC = 93°C^*1
Pulse
Pulse
TC = 25°C
Conditions
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M5 screw
Typical value
Ratings
600
±20
150
300
150
300
730
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
350
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Limits
Min.
Typ.
—
—
VGE(th) Gate-emitter threshold voltage IC = 15mA, VCE = 10V
6
7
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
Tj = 25°C
—
VCE(sat) Collector-emitter saturation voltage IC = 150A, VGE = 15V _{Tj = 125°C}
—
Cies
Input capacitance
—
Coes
Output capacitance
VCE = 10V
—
Cres
Reverse transfer capacitance ^{VGE = 0V}
—
QG
Total gate charge
VCC = 300V, IC = 150A, VGE = 15V
—
td(on)
Turn-on delay time
—
tr
Turn-on rise time
VCC = 300V, IC = 150A
—
td(off)
Turn-off delay time
VGE = ±15V
—
tf
Turn-off fall time
RG = 4.2Ω, Inductive load
—
trr (Note 1) Reverse recovery time
IE = 150A
—
Qrr (Note 1) Reverse recovery charge
—
VEC(Note 1) Emitter-collector voltage
IE = 150A, VGE = 0V
—
Rth(j-c)Q
IGBT part (1/6 module)^*1
—
Thermal resistance
Rth(j-c)R
FWDi part (1/6 module)^*1
—
Rth(c-f)
Contact thermal resistance
Case to heat sink, Thermal compound Applied (1/6 module)^*2
—
RG
External gate resistance
4.2
—
1.7
1.7
—
—
—
600
—
—
—
—
—
2.5
—
—
—
0.085
—
*^{1 : Case temperature (Tc) measured point is just under the chips.}
If you use this value, Rth(f-a) should be measured just under the chips.
*^{2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].}
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Max.
1
8
0.5
2.2
—
23
2.8
0.9
—
120
100
300
300
150
—
2.8
0.17
0.31
—
42
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
Ω
Feb. 2009
2