CM1200HA-50H Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
5
3
2
td(off)
10⁰
td(on)
7
5
tr
3
tf
2
10^–1
7
5 _{5 7 102}
VCC = 1250V, VGE = ±15V
RG = 2.5Ω, Tj = 125°C
Inductive load
2 3 5 7 10³ 2 3 5
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
10¹
7 Single Pulse
5 _{TC = 25°C}
3 Rth(j – c) = 0.012K/ W
2
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–3 2 3 5 7 10^–2 2 3 5 7 10^–1 2 3 5 7 10⁰
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
VCC = 1250V, Tj = 125°C
3 Inductive load
3
2 ^{VGE = ±15V, RG = 2.5Ω}
2
10⁰
trr
10³
7
Irr
7
5
5
3
3
2
2
10^–1
7
5 _{5 7 102}
23
5 7 10³
23
EMITTER CURRENT IE (A)
10²
7
55
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10¹
7 Single Pulse
5 _{TC = 25°C}
3 Rth(j – c) = 0.024K/ W
2
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–3 2 3 5 7 10^–2 2 3 5 7 10^–1 2 3 5 7 10⁰
TIME (s)
VGE – GATE CHARGE
(TYPICAL)
20
VCC = 1250V
IC = 1200A
16
12
8
4
0
0 2000 4000 6000 8000 10000
GATE CHARGE QG (nC)
Mar. 2001