CM1200HA-50H Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
Item
Conditions
Ratings
Unit
VCES
VGES
IC
ICM
Collector-emitter voltage
Gate-emitter voltage
Collector current
VGE = 0V
VCE = 0V
TC = 25°C
Pulse
2500
V
±20
V
1200
A
(Note 1)
2400
A
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Emitter current
Maximum collector dissipation
TC = 25°C
Pulse
TC = 25°C, IGBT part
1200
A
(Note 1)
2400
A
10400
W
Tj
Junction temperature
—
–40 ~ +150
°C
Tstg
Storage temperature
—
–40 ~ +125
°C
Viso
Isolation voltage
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
6000
V
Main terminals screw M8
6.67 ~ 13.00
N·m
—
Mounting torque
Mounting screw M6
2.84 ~ 6.00
N·m
Auxiliary terminals screw M4
0.88 ~ 2.00
N·m
—
Mass
Typical value
2.2
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Item
Conditions
Min
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
Gate-emitter
VGE(th)
threshold voltage
IC = 120mA, VCE = 10V
4.5
IGES
VCE(sat)
Cies
Coes
Cres
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
IC = 1200A, VGE = 15V
VCE = 10V
VGE = 0V
—
—
(Note 4)
—
—
—
—
QG
Total gate charge
VCC = 1250V, IC = 1200A, VGE = 15V
—
td (on)
Turn-on delay time
VCC = 1250V, IC = 1200A
—
tr
Turn-on rise time
VGE1 = VGE2 = 15V
—
td (off)
Turn-off delay time
RG = 2.5Ω
—
tf
Turn-off fall time
Resistive load switching operation
—
VEC (Note 2) Emitter-collector voltage
IE = 1200A, VGE = 0V
—
trr (Note 2) Reverse recovery time
IE = 1200A
—
Qrr (Note 2) Reverse recovery charge
die / dt = –2400A / µs
—
Rth(j-c)Q
Junction to case, IGBT part
—
Rth(j-c)R ^{Thermal resistance}
Junction to case, FWDi part
—
Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied
—
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Limits
Typ
—
Unit
Max
15 mA
6.0
7.5 V
—
0.5 µA
3.20 4.16
3.60
—
V
120
—
nF
13.2
—
nF
4.0
—
nF
5.4
—
µC
—
1.60 µs
—
2.00 µs
—
2.50 µs
—
1.00 µs
2.90 3.77 V
—
1.20 µs
250
—
µC
—
0.012 K/W
—
0.024 K/W
0.006
—
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2001