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CM100TU-12H_09 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
◁
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
103
7
Tj = 125°C
5
tf
3
2
td(off)
102
7
5
td(on)
3
2
101
7
101
tr
23
5 7 102
VCC = 300V
VGE = ±15V
RG = 6.3Ω
2 3 57
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
101
7
5
Single Pulse
3 TC = 25°C
2 Per unit base = Rth(j – c) = 0.31K/W
100
7
5
3
3
2
2
10–1
7
5
10–1
7
5
3
3
2
2
10–2
7
5
10–2
7
5
3
2
10–3
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TIME (s)
MITSUBISHI IGBT MODULES
CM100TU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
102
7 – di /dt = 200A /µs
7
5 Tj = 25°C
5
3
3
2
2
trr
102
101
7
7
Irr
5
5
3
3
2
2
101
7
101
23
5 7 102
23
100
57
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
101
7
5
Single Pulse
3 TC = 25°C
2 Per unit base = Rth(j – c) = 0.7K/W
100
7
5
3
3
2
2
10–1
7
5
10–1
7
5
3
3
2
2
10–2
7
5
10–2
7
5
3
2
10–3
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
IC = 100A
15
VCC = 200V
VCC = 300V
10
5
0
0 50 100 150 200 250 300
GATE CHARGE QG (nC)
4
Feb. 2009